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Amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs) with the LaAlO 3 /ZrO 2 gate dielectric stack employing a novel atmospheric pressure plasma jet process that results in small subthreshold swing and low threshold voltage are proposed and fabricated. The influence of post-deposition annealing (PDA) temperature on LaAlO 3 / ZrO 2 gate dielectric stack and device performance was investigated. The equivalent oxide thickness of the LaAlO 3 /ZrO 2 dielectric stack decreases fromdoi:10.1049/el.2014.0816 fatcat:4i6fc567ejdxdlmjhdpvu25nga