Investigation of LaAlO3/ZrO2/a-InGaZnO thin-film transistors using atmospheric pressure plasma jet

Chien-Hung Wu, Shui-Jinn Wang, Hau-Yuan Huang, Kow-Ming Chang, Hsin-Yu Hsu
2014 Electronics Letters  
Amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs) with the LaAlO 3 /ZrO 2 gate dielectric stack employing a novel atmospheric pressure plasma jet process that results in small subthreshold swing and low threshold voltage are proposed and fabricated. The influence of post-deposition annealing (PDA) temperature on LaAlO 3 / ZrO 2 gate dielectric stack and device performance was investigated. The equivalent oxide thickness of the LaAlO 3 /ZrO 2 dielectric stack decreases from
more » ... tack decreases from 11.5 nm without annealing to 7 nm after a 500°C annealing was applied. The LaAlO 3 /ZrO 2 /a-InGaZnO TFT with a 500°C annealing exhibits a small subthreshold swing of 77 mV·dec −1 , a high field-effect mobility of 9 cm 2 ·V −1 ·s −1 and an excellent current ratio of 1.8 × 10 7 , which could be attributed to the improved gate dielectric quality by the PDA. The LaAlO 3 /ZrO 2 /a-InGaZnO TFTs with excellent gate control ability allow the device to operate at a low operating voltage with low power consumption.
doi:10.1049/el.2014.0816 fatcat:4i6fc567ejdxdlmjhdpvu25nga