An overview on the growth mechanism of nanowire, fabrication and performance of selenide nanowires devices is presented. Binary, ternary and quaternary selenides have relatively low optical absorption coefficient and have wide transparency range. This combination of properties of selenides makes them very important materials for detector applications. Lead selenide (PbSe) nano particles and nanowires were grown by the physical vapor transport (PVT) method and zinc selenide (ZnSe) nanowire was

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... own by chemical vapor transport (CVT) methods. Observations on the growth of PbSe indicate that oriented attachment of nanocrystal building blocks produces nanowires. On silicon (111) substrates binding was observed to be on (001) and (111) faces. Zinc selenide nanowires were fabricated into nano Avalanche Photodiodes (Nano-APDs) structure. Experimental results on the fabricated devices of zinc selenide show significant enhancement in photoconductivity. Growth of nanowire and fabrication of devices has progressed significantly and has shown significant improvements in the performance, but fabrication still remains a big challenge. Figure 6 : Schematic comparison of ZnSe NW length to the relative thermal gradient in the furnace. NW length is seen to increase with decreasing temperature, or higher ΔT. (7) .