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The low-temperature electron mobility is investigated here for electrons confined in modulation-doped In 0.53 Ga 0.47 As/InP single symmetric quantum wells. The subband structure calculation is developed via variational method, both Schrödinger and Poisson equations being solved simultaneously with adequate heterointerface matching conditions. With this in hands, the main electron scattering rates are computed, namely alloy disorder, remote ionized impurity, and interface roughness. As adoi:10.1590/s0103-97332006000300035 fatcat:cpxa5l2tpvfd5fso437ribtsku