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Si(111) ! 3 ! 3 -Ag surfaces, prepared under various annealing conditions, was systematically investigated by scanning tunneling microscopy (STM) and reflection-high-energy electron diffraction (RHEED). Although the RHEED patterns were seemingly the same for all cases, the STM images showed clear difference in surface morphology and local structures at steps; step edges were roundish and decorated by random adsorption of clusters when annealed below 600 . However, the steps were straight withdoi:10.1380/jsssj.24.556 fatcat:ejjwonpcd5ddjoszyrpuun3l6y