Comparison of Three Dimensional Partially and Fully Depleted SOI MOSFET Characteristics Using Mathcad

Neha Goel, Manoj Kumar Pandey
2016 Journal of Nano- and Electronic Physics  
In this Paper, comparison of three Dimensional characteristics between partially and fully depleted Silicon-On-Insulator (SOI MOSFET) is presented, this is done through 3D device modeling using mathcad, based on the numerical solution of three dimensional Poisson's equation. Behavior of Various Parameters like Surface Potential, Threshold Voltage, Electric field and Drain current are presented in this paper.
doi:10.21272/jnep.8(1).01041 fatcat:ndjgthvypfbbvpql2oaajgchu4