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Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors
Acta Physica Polonica. A
Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency rangedoi:10.12693/aphyspola.107.408 fatcat:botm4kgnsjdkfkq7o7qdkqbk74