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Influence of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing of Large-Diameter Silicon Wafer Applied to Substrate of GaN-Based LEDs
2014
Sensors and materials
Currently, large-diameter silicon (Si) wafers have been applied to the substrate of GaN-based light-emitting diodes (LEDs) for realizing low carbon societies at a low cost. In the Si polishing process, the removal rate is strongly dependent on the pad surface asperity. We have developed a quantitative evaluation method based on contact image analysis using an image rotation prism. In this paper, we discuss the influences of pad surface asperity on removal rate for Si wafers determined by
doi:10.18494/sam.2014.975
fatcat:falmhgu4x5gibaizcsdqhvkxrm