On the effect of the barrier widths in the InAs/AlSb/GaSb single‐barrier interband tunneling structures

J. F. Chen, L. Yang, M. C. Wu, S. N. G. Chu, A. Y. Cho
1990 Journal of Applied Physics  
Quantization effect on capacitancevoltage and currentvoltage characteristics of an InAs/AlSb/GaSb interband tunneling diode J. Appl. Phys. 68, 4286 (1990); 10.1063/1.346222 InAs/AlSb/GaSb singlebarrier interband tunneling diodes with high peaktovalley ratios at room temperature
doi:10.1063/1.346355 fatcat:t5iwtwo5v5dr7nizsmavfcyb5q