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On the effect of the barrier widths in the InAs/AlSb/GaSb single‐barrier interband tunneling structures
1990
Journal of Applied Physics
Preserved Fulltext
Quantization effect on capacitancevoltage and currentvoltage characteristics of an InAs/AlSb/GaSb interband tunneling diode J. Appl. Phys. 68, 4286 (1990); 10.1063/1.346222 InAs/AlSb/GaSb singlebarrier interband tunneling diodes with high peaktovalley ratios at room temperature
doi:10.1063/1.346355
fatcat:t5iwtwo5v5dr7nizsmavfcyb5q