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Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy
1999
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
InAsN/InGaAs single quantum wells ͑SQWs͒ with different nitrogen concentration have been successfully grown on InP substrates by gas source molecular beam epitaxy used rf plasma nitrogen source. Photoluminescence ͑PL͒ results of the as-grown samples show red-shifted PL peak energy and rapidly degraded intensity as the nitrogen concentration increases. The roughly estimated maximum nitrogen mole fraction in these samples is 0.4%. Both the PL intensity and linewith of these InAsN/InGaAs SQWs were
doi:10.1116/1.590860
fatcat:x7ymt3cel5d3tppj3w5gyco34a