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Analog IGZO memristor with extended capabilities
IEEE Journal of the Electron Devices Society
In this paper an IGZO memristor with multiple states and analog tuning extended capability is reported. The device has a planar structure and is fabricated by magnetron sputtering on glass substrate. The device resistance could be gradually increased and decreased within the range of one order of magnitude. Larger resistance changes are also possible but they are mostly irreversible. The obtained memristor looks promising to be used as electronic synapse in hardware implemented artificialdoi:10.1109/jeds.2020.3006000 fatcat:ep2eva4blvc3rdru3k3dbadhdi