A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2021; you can also visit the original URL.
The file type is application/pdf.
Analog IGZO memristor with extended capabilities
2020
IEEE Journal of the Electron Devices Society
Preserved Fulltext
In this paper an IGZO memristor with multiple states and analog tuning extended capability is reported. The device has a planar structure and is fabricated by magnetron sputtering on glass substrate. The device resistance could be gradually increased and decreased within the range of one order of magnitude. Larger resistance changes are also possible but they are mostly irreversible. The obtained memristor looks promising to be used as electronic synapse in hardware implemented artificial
doi:10.1109/jeds.2020.3006000
fatcat:ep2eva4blvc3rdru3k3dbadhdi