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3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling
2015
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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This paper presents coupling characteristics of multiple traps in HKMG nMOSFETs by a 3D kinetic Monte-Carlo (KMC) simulator we developed, which includes several fully-coupled multi-physical models: trap generation/ recombination, trapping/detrapping to/from channel, metal gate, and the interaction of traps. It shows that activation energy and trapping/detrapping from/to channel/gate impact on coupling of multiple traps. Interaction of traps complicates mechanism in TAT current, BTI, and RTN.
doi:10.1109/sispad.2015.7292280
fatcat:yfzo2zogzneb5e2ne23cdjg42i