3D KMC reliability simulation of nano-scaled HKMG nMOSFETs with multiple traps coupling

Yun Li, Zhiyuan Lun, Peng Huang, Yijiao Wang, Hai Jiang, Gang Du, Xiaoyan Liu
2015 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)  
This paper presents coupling characteristics of multiple traps in HKMG nMOSFETs by a 3D kinetic Monte-Carlo (KMC) simulator we developed, which includes several fully-coupled multi-physical models: trap generation/ recombination, trapping/detrapping to/from channel, metal gate, and the interaction of traps. It shows that activation energy and trapping/detrapping from/to channel/gate impact on coupling of multiple traps. Interaction of traps complicates mechanism in TAT current, BTI, and RTN.
doi:10.1109/sispad.2015.7292280 fatcat:yfzo2zogzneb5e2ne23cdjg42i