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Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs

S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang
2007 Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena  

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The nonradiative lifetime and spontaneous emission quantum efficiency in molecular-beam epitaxy grown bulk GaAs is determined using injection level dependent photoluminescence ͑PL͒ measurements. These measurements were performed at temperatures of 300, 230, 100, and 50 K using a HeNe pump laser with powers ranging from 0.3 to 40 mW. The quantum efficiency and lifetime is inferred from the power law relation linking pump power and integrated PL signal that is predicted by the rate equations. The
more » ... nonradiative lifetime for bulk GaAs is determined to be 0.3 s, with an additional temperature dependent component attributed to the AlGaAs barriers that rapidly reduces the nonradiative lifetime at temperatures above 230 K. The peak quantum efficiency is Ͼ0.96 at 300 K and Ͼ0.99 at temperatures below 230 K.
doi:10.1116/1.2720864 fatcat:blrbaxjd4jdj7f6ue2cy6twucm
Citation

S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang. "Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs." Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 25.3 (2007) 1077