Phosphorus gettering in multicrystalline silicon studied by neutron activation analysis

D. Macdonald, A. Cuevas, A. Kinomura, Y. Nakano
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.  
Neutron Activation Analysis (NAA) is a powerful and sensitive technique for measuring trace amounts of impurities. In this work, we have applied NAA to the problem of identifying metallic impurities within the bulk of solar-grade cast multicrystalline silicon (mc-Si) wafers. In particular, the change in concentrations of these contaminants after phosphorus gettering is monitored, revealing a marked reduction in some metal species, but not in others.
doi:10.1109/pvsc.2002.1190514 fatcat:kpzgj33wzfg2jc5v54xwhou7ma