Enhanced Sensitivity of Atomic-Resolution Spectroscopic Imaging by Direct Electron Detection

David J. Baek, Berit H. Goodge, Di Lu, Yasuyuki Hikita, Harold Y. Hwang, Lena F. Kourkoutis
2017 Microscopy and Microanalysis  
With recent technical advances in spectroscopic imaging using electron energy loss spectroscopy (EELS) performed in an aberration-corrected STEM, we are now able to study the chemical and electronic structures of materials with atomic-resolution [1]. Challenges, however, remain; particularly for applications that require short acquisition times or those that are limited to low electron dose such as the mapping of beam sensitive materials. Improving the signal-to-noise ratio (SNR) of spectra
more » ... rded under low-dose conditions is, therefore, imperative for a range of spectroscopic applications. Here, we demonstrate the use and benefits of a direct electron detector (DED) for atomic-resolution spectroscopic mapping. Compared to traditional indirect detectors, these DEDs use active pixel sensor technology for direct detection of electrons without the use of an intermediate scintillator. As a result, DEDs offer improved detective quantum efficiency (DQE), narrow point spread function (PSF), and superior SNRs in dose-limited imaging applications [2][3][4].
doi:10.1017/s1431927617002513 fatcat:avcw6zdvjjff5f2yeh254bcrxe