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Physical Review B
Quantum wells (QWs) are nanostructures consisting of alternating layers of a low and high band-gap semiconductor. The band gap of QWs can be tuned by changing the thickness of the low band-gap layer, due to quantum confinement effects. Although this principle is well established for crystalline materials, there is still controversy for QWs fabricated from amorphous materials: How strong are the confinement effects in amorphous QWs, where, because of the disorder, the carriers are localized todoi:10.1103/physrevb.90.125430 fatcat:fhfyolytgfey3bertql422qkbi