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0.2 V Drive Voltage Substrate Removed Electro-Optic Mach–Zehnder Modulators With MQW Cores at 1.55 μm
2014
Journal of Lightwave Technology
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Novel electro-optic modulators in compound semiconductor epilayers using substrate removal techniques are reported. Epilayer consists of a p-i-n junction in which i layer is composed of an InGaAlAs/InAlAs MQW. This creates an optical mode with very strong vertical confinement and overlapping very well with the large electric field of the reverse biased p-i-n junction. This approach combined with the large quadratic electro-optic coefficient due to MQW improves efficiency of modulation
doi:10.1109/jlt.2013.2293345
fatcat:tcdw3dzptrce3ihnsmv64u7ige