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Transistor and circuit design for 100-200-GHz ICs
IEEE Journal of Solid-State Circuits
Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and parasitic reduction. Figures of merit for mixed-signal ICs are developed and HBT scaling laws introduced. Device and circuit results are summarized, including a simultaneous 450 GHz and 490 GHz max DHBT, 172-GHz amplifiers with 8.3-dBm output power and 4.5-dB associated power gain, and 150-GHz static frequency dividers (a digital circuit figure-of-merit for a device technology). To compete withdoi:10.1109/jssc.2005.854609 fatcat:gtajscadojfs3nwrxu3yxwbgru