Transistor and circuit design for 100-200-GHz ICs

Z. Griffith, Yingda Dong, D. Scott, Yun Wei, N. Parthasarathy, M. Dahlstrom, C. Kadow, V. Paidi, M.J.W. Rodwell, M. Urteaga, R. Pierson, P. Rowell (+4 others)
2005 IEEE Journal of Solid-State Circuits  
Compared to SiGe, InP HBTs offer superior electron transport properties but inferior scaling and parasitic reduction. Figures of merit for mixed-signal ICs are developed and HBT scaling laws introduced. Device and circuit results are summarized, including a simultaneous 450 GHz and 490 GHz max DHBT, 172-GHz amplifiers with 8.3-dBm output power and 4.5-dB associated power gain, and 150-GHz static frequency dividers (a digital circuit figure-of-merit for a device technology). To compete with
more » ... ced 100-nm SiGe processes, InP HBTs must be similarly scaled and high process yields are imperative. Described are several process modules in development: these include an emitter-base dielectric sidewall spacer for increased yield, a collector pedestal implant for reduced extrinsic cb , and emitter junction regrowth for reduced base and emitter resistances. Index Terms-InP heterojunction bipolar transistor, static frequency divider, millimeter-wave amplifier, dielectric sidewall-spacer, collector pedestal, emitter regrowth.
doi:10.1109/jssc.2005.854609 fatcat:gtajscadojfs3nwrxu3yxwbgru