Indium-Rich InGaP Nanowires Formed on InP (111)A Substrates by Selective-Area Metal Organic Vapor Phase Epitaxy

Fumiya Ishizaka, Keitaro Ikejiri, Katsuhiro Tomioka, Takashi Fukui
2013 Japanese Journal of Applied Physics  
We studied the growth of indium-rich InGaP nanowires (NWs) on InP (111)A substrates by selective-area metal organic vapor phase epitaxy (SA-MOVPE). We obtained vertically aligned InGaP NWs by optimizing growth conditions, such as group III supply ratio and V/III ratio. We found that the height, diameter, shape, and composition of InGaP NWs depended significantly on the supply ratios of trimethylgallium (TMGa) and trimethylindium (TMIn). As the supply ratio of TMGa was increased, the lateral
more » ... th was drastically enhanced, and the uniformity of NWs deteriorated. Furthermore, the sidewall facets of NWs changed from f 211g to f 110g as the supply ratio of TMGa was increased, indicating the possibility of structural transition from wurtzite (WZ) to zinc blende (ZB). We propose a possible growth model for such lateral growth, uniformity, and structural transition. Photoluminescence (PL) measurements revealed that the Ga compositions ranged approximately from 0 to 15%. Our results show that highly uniform InGaP NWs can be grown by controlling the growth conditions.
doi:10.7567/jjap.52.04ch05 fatcat:mjqvqszk2zbqxjwn22u6hzmvc4