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Room temperature midinfrared electroluminescence from InAs quantum dots
Applied Physics Letters
We demonstrate room temperature midinfrared electroluminescence from intersublevel transitions in self-assembled InAs quantum dots. The dots are grown in GaAs/AlGaAs heterostructures designed to maximize current injection into dot excited states while preferentially removing electrons from the ground states. As such, these devices resemble quantum cascade lasers. However, rigorous modeling of carrier transport through the devices indicates that the current transport mechanism for quantum dotdoi:10.1063/1.3080688 fatcat:54nfw3gqkfdape5i7l3hiwdewi