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Comparison of the electronic structure ofInAs/GaAspyramidal quantum dots with different facet orientations
Physical Review B (Condensed Matter)
Using a pseudopotential plane-wave approach, we have calculated the electronic structure of strained InAs pyramidal quantum dots embedded in a GaAs matrix, for a few height (h)-to-base(b) ratios, corresponding to different facet orientations ͕101͖, ͕113͖, and ͕105͖. We find that the dot shape ͑not just size͒ has a significant effect on its electronic structure. In particular, while the binding energies of the ground electron and hole states increase with the pyramid volumes (b 2 h), thedoi:10.1103/physrevb.57.r9408 fatcat:mf37zzf5czbiff4wklmpyqaqpq