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Intraband transitions in quantum dot–superlattice heterostructures
Physical Review B
By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self organized InAs quantum dots into an AlAs/GaAs superlattice enables us to tune the optical transition energy by changing the superlattice period as well as by changing the growth conditions of the dots. Using a one band envelope function framework we are able,doi:10.1103/physrevb.72.155310 fatcat:limsnfy5pfdadcekgp6wkjfyj4