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Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1−xBexSe: Temperature- and pressure-dependent photoluminescence studies
2001
Applied Physics Letters
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We have studied undoped Zn 1Ϫx Be x Se alloys grown by molecular beam epitaxy by photoluminescence ͑PL͒ as a function of temperature and pressure. We suggest that there are isoelectronic excitonic traps in this material. The binding energy of the isoelectronic bound excitons is deep, between 40 and 50 meV. We have also shown that the temperature and pressure dependences of the Zn 1Ϫx Be x Se PL are close to those of ZnSe. From this we conclude that the dominant excitonic recombination is of an "effective mass" type.
doi:10.1063/1.1381039
fatcat:vlpwoqccyjbwfmrr6x4wbub6oe