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Application of Dislocation Dynamics Simulation to the STI Semiconductor Structure
転位動力学シミュレーションのSTI半導体構造への応用
2004
Journal of the Society of Materials Science Japan
転位動力学シミュレーションのSTI半導体構造への応用
We have proposed a method to infer the initiation points and slip system of generated dislocations through the combination of FEM calculation and dislocation dynamics simulation. In order to reproduce accurate shape of dislocations observed by TEM, we adopted the Brown's core splitting in the same procedure that Schwarz did. We applied our method to dislocation motion in a shallow trench isolation (STI) structure. Both initiation points and slip systems of four kinds of generated dislocation
doi:10.2472/jsms.53.1378
fatcat:a7iythhg2fef7hrmmhluinc6ia