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Room temperature 200 keV electron irradiation effects on the area retraction behavior presented by 6.75 nm thick Au thin films deposited over a self-standing SiO 2 / silicon nitride membrane are investigated as a function of the irradiation fluence Φ. The as-deposited films already contain void discontinuities. The void growth behavior is investigated considering irradiation and thermally-induced surface atoms' migration. The film's coverage area A(Φ) and void perimeter P(Φ), obtained viadoi:10.21203/rs.3.rs-206668/v1 fatcat:yc7wbjqy6ncszccwuigegsdacm