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X‐ray truncation rod study of Ge(001) surface roughening by molecular beam homoepitaxial growth
1996
Journal of Applied Physics
Surface roughness was determined by x-ray diffraction for Ge films on Ge͑001͒ grown by molecular beam epitaxy at room temperature. The truncation rod intensities and transverse-scan line profiles were measured as a function of perpendicular momentum transfer. Depending on the initial morphology of the surface, the same growth condition resulted in very different surface morphologies. Two types of initial surfaces were used. One was an atomically flat surface with very large terraces. The other,
doi:10.1063/1.361507
fatcat:jft6ietmunbhxkvbcd2eth4wxy