Stress-assisted nickel-induced crystallization of silicon on glass

P. Hashemi, J. Derakhshandeh, S. Mohajerzadeh, M. Robertson, A. Tonita
2004 Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films  
Articles you may be interested in Low-temperature copper-induced lateral growth of polycrystalline germanium assisted by external compressive stress J. Appl. Phys. 97, 044901 (2005); 10.1063/1.1836012 Aluminum-induced crystallization of amorphous silicon-germanium thin films The application of mechanical-compressive stress during low-temperature annealing has been investigated for the crystallization of SiGe alloys on plastic substrates. It was observed that crystallization of an amorphous
more » ... f an amorphous Ge/Cu/Ge "sandwich" can occur at temperatures as low as 130°C with the application of an equivalent compressive strain of 0.05%. By using this sandwich as a seed for crystallization of an underlying amorphous SiGe film, partial crystallization of the film was observed to occur at a temperature of 180°C, again under an equivalent compressive strain of 0.05%. Without the application of the compressive strain, crystallization was not observed for either system at the temperatures investigated. The atomic percentage of Si in the SiGe alloy was 35% as confirmed by Rutherford backscattering spectroscopy and the partial crystallization of the SiGe layer was verified by scanning electron microscopy, x-ray diffraction, and transmission-electron microscopy analyses.
doi:10.1116/1.1722271 fatcat:477yuo2najhrddbxa4v2ikilva