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A m ethod is described for m easuring the therm oelectric power of m etals in the im m ediate neighbourhood of their m elting points, for both the solid and the m olten states, an d for therm o junctions formed between them . R esults are recorded for the m etals Sn, Pb, In, Bi, Cd and Ga. On m elting, a jum p in therm oelectric power is observed in th e negative sense for P b, In, Cd and Ga and in th e positive sense for Bi and Sn. Prem elting trends are found in solid In and Cd, and also possible prefreezing effects in m olten Sn and Bi.doi:10.1098/rspa.1966.0172 fatcat:s3andza4prb7rjtvk7ogspxhmm