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Fringe Field Effects on Transient Characteristics of Nano-Electromechanical (NEM) Nonvolatile Memory Cells
2014
JSTS Journal of Semiconductor Technology and Science
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The fringe field effects on the transient characteristics of nano-electromechanical (NEM) memory cells have been discussed by using an analytical model. The influence of fringe field becomes stronger as the size of a cell decreases. By using the proposed model, the dependency of NEM memory transient characteristics on cell parameters has been evaluated.
doi:10.5573/jsts.2014.14.5.609
fatcat:6vtfqwwodzfhpkusxdo5u5rh6y