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In this paper, analog/RF performance of new device architecture: graded channel dual material double gate (GCDMDG) is investigated using ATLAS device simulator. This configuration achieves higher drain current, peak transconductance and higher values of cut-off frequency at lower gate voltage along with better intrinsic gain for an amplifier. This unique configuration is favorable for gate length scaling.doi:10.1109/tnano.2012.2204439 fatcat:hywi5yn4kbgzde5sl22qgmji4a