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Dielectric behavior of SiN x films, fabricated by microwave electron cyclotron resonance discharge, has been studied as a function of film thickness on the basis of the current-voltage and the capacitance-voltage characteristics. In the thickness range (20 nmϽdϽ80 nm), the resistivity and the critical field for SiN x were found not to be sensitive to the film thickness ͑d͒ and which was opposite to strong dependence of the dynamic dielectric constant ⑀ d on thickness. To explain the ⑀ ddoi:10.1116/1.591100 fatcat:mfbiptacgreevhqa4hvcdmrss4