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The initial molecular beam epitaxy growth of GaN on GaAs͑001͒ was studied by real-time monitoring of the (3ϫ3) surface reconstruction and its transition to an unreconstructed (1ϫ1). Various growth conditions were established by variation of the V/III ratio, i.e., the Ga flux. We characterized the effect of the first two strained GaN monolayers: a N-terminated GaN (3ϫ3) monolayer and a second unreconstructed (1ϫ1) monolayer. A series of samples were grown under N-rich, Ga-rich, anddoi:10.1063/1.1345516 fatcat:mrsbz3jf4bgf3c44koxrea5wji