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Thin-film silicon (Si)-based transient electronics represents an emerging technology that enables spontaneous dissolution, absorption and, finally, physical disappearance in a controlled manner under physiological conditions, and has attracted increasing attention in pertinent clinical applications such as biomedical implants for on-body sensing, disease diagnostics, and therapeutics. The degradation behavior of thin-film Si materials and devices is critically dependent on the device structuredoi:10.3390/s22030802 pmid:35161547 pmcid:PMC8838160 fatcat:baj6wgjsiffcno7iwtyeztzxwm