In1-xGaxAs Double Metal Gate-Stacking Cylindrical Nanowire MOSFET for highly sensitive Photo detector [post]

Sanjeev Kumar Sharma, Parveen Kumar, Balwant Raj, Balwinder Raj
2021 unpublished
This paper proposed a highly sensitive Double Metal Gate-stacking Cylindrical Nanowire-MOSFET (DMG CL-NWMOSFET) photosensor by using In1 − xGaxAs. For the best control of short channel effects (SCEs), a double metal gate has been utilized and for efficient photonic absorption, III-V compound has been utilized as channel material. The currently available Conventional Filed-Effect-Transistors (CFET) based photosensor have been used threshold voltage as parameter for the calculation of
more » ... but in the proposed photosensor, change in subthreshold current has been used as the detecting parameters for sensitivity (Iillumination/Idark). The scientifically electrons study and the photo-conductive characteristics of In1 − xGaxAs CL-NWMOSFET are taken through Silvaco Atlas Tools. After the analysis of In1 − xGaxAs dual Metal Gate Stacking Cylindrical NWMOSFET responds to detectable spectrum (~ 450 nm), incidents light with constant, reversible and fast response by responsivity (4.3 mAW− 1), high Iillumination/Idark (1.36 * 109) and quantum-efficiency (1.12 %). The obtained results of In1 − xGaxAs DMG CL-NWMOSFET based photodetectors have the potential in optoelectronics applications.
doi:10.21203/rs.3.rs-330965/v1 fatcat:opkrjf6gbbh3tgyh4q7g3hayhq