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In1-xGaxAs Double Metal Gate-Stacking Cylindrical Nanowire MOSFET for highly sensitive Photo detector
[post]
2021
unpublished
This paper proposed a highly sensitive Double Metal Gate-stacking Cylindrical Nanowire-MOSFET (DMG CL-NWMOSFET) photosensor by using In1 − xGaxAs. For the best control of short channel effects (SCEs), a double metal gate has been utilized and for efficient photonic absorption, III-V compound has been utilized as channel material. The currently available Conventional Filed-Effect-Transistors (CFET) based photosensor have been used threshold voltage as parameter for the calculation of
doi:10.21203/rs.3.rs-330965/v1
fatcat:opkrjf6gbbh3tgyh4q7g3hayhq