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Variation in Transistor Performance and Leakage in Nanometer-Scale Technologies
2008
IEEE Transactions on Electron Devices
Variation in transistor characteristics is increasing as CMOS transistors are scaled to nanometer feature sizes. This increase in transistor variability poses a serious challenge to the cost-effective utilization of scaled technologies. Meeting this challenge requires comprehensive and efficient approaches for variability characterization, minimization, and mitigation. This paper describes an efficient infrastructure for characterizing the various types of variation in transistor
doi:10.1109/ted.2007.911351
fatcat:i5eigzxd7ba4fgocgh2vcfbwtq