A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2011; you can also visit the original URL.
The file type is
The authors have investigated electrical transport in a type II GaSb/InAs superlattice grown on GaSb using "quantitative mobility spectrum analysis." Their results indicate that the superlattice contributes a lone electron specie with an ambient temperature mobility of ϳ10 4 cm 2 / V s. Variable temperature studies in the range 50-300 K show that the carrier is associated with an activation energy of 0.27 eV, which is very close to the superlattice band gap.doi:10.1116/1.2839641 fatcat:p7qi4e462farji3dgysbq6udpq