A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2015; you can also visit the original URL.
The file type is
Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates
IEEE Transactions on Electron Devices
The effects of fringing capacitances on the high-frequency performance of T-gate GaN high-electron mobility transistors (HEMTs) are investigated. Delay time components have been analyzed for gate-recessed InAlN/GaN HEMTs with a total gate length of 40 nm and f T / f max of 225/250 GHz. It is found that the gate extrinsic capacitance contributes significantly to the parasitic delay-approximately 50% of the total delay in these highly scaled devices. The gate extrinsic capacitance comprises twodoi:10.1109/ted.2014.2299810 fatcat:4usakj3ub5geld4fx3tgjya27e