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2013 IEEE Electric Ship Technologies Symposium (ESTS)
Semiconductor modules with medium-voltage (MV) Si IGBTs and anti-parallel silicon-carbide (SiC) junction-barrier Schottky (JBS) diodes are of interest in commercial and naval converters as they allow for significantly reduced switching losses and at present are more cost-effective than an all-SiC switch . A three-level converter is being built and tested using custom modules made with 60A (120A pulsed), 4.5kV Si IGBTs and SiC JBS diodes. This work provides a platform to de-risk anddoi:10.1109/ests.2013.6523728 fatcat:zfnv4brkavgmza5qcqjv2lhy5u