A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2005; you can also visit the original URL.
The file type is
In "type-II" NpN InP-GaAsSb-InP double heterostructure bipolar transistors (DHBTs), the + GaAsSb base conduction band edge lies above the InP collector conduction band: a small ballistic injection energy is thus imparted to electrons as they are launched into the collector. The resulting high initial velocity should in principle reduce the collector signal delay time in comparison to the case where thermal electrons are accelerated by the collector electric field alone. In this letter, wedoi:10.1109/led.2004.838553 fatcat:snmvag2eyjcjvo4f6xm7k6yfku