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Inelastic Stress Relaxation in Single Crystal SiC Substrates
2004
Materials Science Forum
Optical methods were used to measure thermal deformations in commercial 4H-and 6H-SiC wafers. In general, during thermal excursions to 500 o C, the radii of curvature of the wafers increased (i.e., the wafers became less bowed). Upon cooling to room temperature, nearly all the wafers retained the high temperature radius of curvature values, a characteristic of thermoplastic deformation. Further cyclic excursions to 500 o C did not yield any significant changes in the radii of curvature, thus
doi:10.4028/www.scientific.net/msf.457-460.375
fatcat:fxxrumyerbbqzg2ywelgqsljt4