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TENCON 2003. Conference on Convergent Technologies for Asia-Pacific Region
Absrracr-In this paper, for the first time, we report a study on the hot carrier reliability performance of Single Halo (SH) thin film Silicon-on-Insulators (SOI) nMOSFETs for mixed signal applications. The single halo structure has a high pocket impurity concentration near the source, end of the chandel and a low impurity concentration in the rest of the channel. Besides having excellent dc output characteristics, better Va -L roll-off control, lower DIBL, higher breakdown voltages and kinkdoi:10.1109/tencon.2003.1273241 fatcat:3v3hzaypl5d5de5y7jc34bkyzy