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Porous layers fabricated by anodic etching of n-GaP substrates in a sulfuric acid solution were studied by electron microscopy and cathodoluminescence ͑CL͒ microanalysis. The morphology of porous layers was found to depend strongly upon the anodization conditions. When the etching process starts at the initial surface, "catacomb-like" pores and current-line oriented pores are introduced at low and high anodic current densities, respectively. After the initial development of either kind of pore,doi:10.1063/1.1337922 fatcat:xg3qxed5xbbzfgeqh2ccholzzi