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For the first time, the high-frequency noise behavior of tensile-strained n-channel metal-oxide-semiconductor fieldeffect transistors, including their temperature dependency, is experimentally examined. Our experimental results show that with similar saturation voltages, the strained device is found to have larger channel noise than the control device at the same bias point. For given direct-current power consumption, however, due to enhanced transconductance, the strained device has betterdoi:10.1109/ted.2010.2104153 fatcat:l6qmfm3dufazhdlbclijjajr7u