Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs

Sheng-Chun Wang, Pin Su, Kun-Ming Chen, Bo-Yuan Chen, Guo-Wei Huang, Cheng-Chou Hung, Sheng-Yi Huang, Cheng-Wen Fan, Chih-Yuh Tzeng, Sam Chou
2011 IEEE Transactions on Electron Devices  
For the first time, the high-frequency noise behavior of tensile-strained n-channel metal-oxide-semiconductor fieldeffect transistors, including their temperature dependency, is experimentally examined. Our experimental results show that with similar saturation voltages, the strained device is found to have larger channel noise than the control device at the same bias point. For given direct-current power consumption, however, due to enhanced transconductance, the strained device has better
more » ... vice has better smallsignal behaviors (higher f t and f max ) and noise characteristics (smaller NF min and R n ) than the control device. Index Terms-Metal-oxide-semiconductor field-effect transistors (MOSFETs), noise, radio frequency (RF), temperature, tensile strained, van der Ziel model.
doi:10.1109/ted.2010.2104153 fatcat:l6qmfm3dufazhdlbclijjajr7u