Ruthenium Oxide (RuO 2 ) thin films were prepared on silicon substrates by solution chemistry technique. X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), micro-Raman, X-ray photoelectron spectroscopy (XPS), and four probe Van-der-paw technique were used for the film characterization. X-ray analysis shows a rutile structure in these films. The films annealed at 700 o C showed lowest resistivity of 29 x 10 -5 ohm-cm. The presence of E g , A 1g , and B 2g modes is consistent with the Raman

more »

... pectrum of rutile phase. These modes as well as additional unidentified band at about 477 cm -1 were investigated by temperature dependent Raman studies. Based on the result, band at 477 cm -1 that disappears above 370 K is attributed to hydrated RuO 2 present in the films. XPS analysis show stoichiometric rutile RuO 2 present in the films. Small concentrations of RuCl 3 , RuO 3 and hydrated RuO 2 were also detected. Pb 0.9 La 0.15 TiO 3 (PLT15) thin films were deposited on RuO 2 /Si substrates and characterized for its ferroelectric properties to demonstrate that solution deposition technique offers an alternative approach for preparing high quality RuO 2 bottom electrodes. EXPERIMENTAL RuCl 3 .x.H 2 O was used as a precursor material was dissolved in absolute alcohol and diluted to 0.05M/L for coating. The precursor solution was spun coated on the silicon substrates Mat. Res. Soc. Symp. Proc. Vol. 655