Optical properties of CuSe thin films - band gap determination

Milica Petrovic, Martina Gilic, Jovana Cirkovic, Maja Romcevic, Nebojsa Romcevic, Jelena Trajic, Ibrahim Yahia
2017 Science of Sintering  
Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be ~2.7 eV and that for indirect
more » ... or indirect transition it is ~1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material.
doi:10.2298/sos1702167p fatcat:d5vdx6sr5fg4hpgykjvsqj7vqu