Analysis of Recombination Processes in 0.5–0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb

D. Donetsky
2004 AIP Conference Proceedings  
Recent data on electron and hole lifetime in quaternary lattice-matched material as well as recombination velocities for the interface of that material with GaSb and AlGaAsSb will be presented in this talk. The results were obtained in collaboration with MIT Lincoln Laboratory and Lockheed Martin Corporation.
doi:10.1063/1.1841909 fatcat:n7k27y6625amvo6itofijb27tm