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In this study, the forward bias current-voltage-temperature (I-V-T) characteristics of (Mo/Au)–AlGaN/GaN high electron mobility transistors (HEMTs) have been investigated over the temperature range of 100-450K. The barrier height (Fb), ideality factor (n), series resistance (Rs) and shunt resistance (Rp) of (Mo/Au)–AlGaN/GaN HEMTs have been calculated from their experimental forward bias current–voltage-temperature (I-V-T). The capacitance–voltage (C–V) of (Au/Mo)- AlGaN/GaN HEMTs weredoaj:f8d36f81c6374a03adc50bc9f0ba3622 fatcat:dbmlsjejy5hyjju6eebvtuz2au