Tunneling magnetoresistance and induced domain structure inAl2O3-based junctions

M. Hehn, O. Lenoble, D. Lacour, C. Féry, M. Piécuch, C. Tiusan, K. Ounadjela
2000 Physical Review B (Condensed Matter)  
Magnetization reversal in sputtered Co and oxidized Co ͑CoOx͒ layers are studied using transport measurements and magneto-optic Kerr effect. When associated in a magnetic tunnel junction, the two magnetic layers show a strong ferromagnetic coupling. Using the tunnel magnetoresistive effect as a probe for micromagnetic studies, we show the existence of an unexpected domain structure in the soft Co layer. This domain structure originates from the duplication of the domain structure of the hard
more » ... ture of the hard CoOx magnetic layer template into the soft Co layer via the ferromagnetic coupling.
doi:10.1103/physrevb.61.11643 fatcat:nw7r6m5lsrbpxkakgxmsfpthku