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Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling model
2019
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The leakage current in the AlGaN Schottky diode under a reverse bias is simulated and compared within the frameworks of the thermionic emission-diffusion and phonon-assisted tunneling models. It is shown that the phonon-assisted tunneling model is suitable to describe the reverse-bias characteristic of the AlGaN Schottky contact and can also be applied to calculate the gate leakage current in the AlGaN/GaN high electron mobility transistor. doi: 10.18720/MPM.4112019_4
doi:10.18720/mpm.4112019_4
fatcat:4mshk4ohaveutp5itb7cjoon5i