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Strain effect in aGaAs−In0.25Ga0.75As−Al0.5Ga0.5Asasymmetric quantum wire
2000
Physical Review B (Condensed Matter)
We report a theoretical investigation of the strain effects on the electronic energy band in a GaAs-In 0.25 Ga 0.75 As-Al 0.5 Ga 0.5 As asymmetric quantum wire formed in a V-grooved substrate. Our model is based on the sp 3 s* tight-binding model. It includes different spatial distributions of the lattice-mismatchinduced strain. We solve numerically the tight-binding Hamiltonian through the local Green's function from which the electronic local density of states ͑LDOS͒ is obtained. The detailed
doi:10.1103/physrevb.61.8306
fatcat:jraod3frvnbkhl6fyjpc5mx7ye