Three-dimensional analysis of leakage currents in III-V HBTs

V. Palankovski, R. Klima, R. Schultheis, S. Selberherr
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu  
We present fully three-dimensional simulation results for a real HBT structure as applied in MMICs. Investigation of the leakage is performed in attempt to explain device behavior in the complete voltage range. The paper gives a justification for the need of three-dimensional simulation and addresses critical development, modeling, and simulation issues.
doi:10.1109/gaas.2002.1049066 fatcat:pihaoxwyzrdqve2g2pgv2tmkf4