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Three-dimensional analysis of leakage currents in III-V HBTs
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu
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We present fully three-dimensional simulation results for a real HBT structure as applied in MMICs. Investigation of the leakage is performed in attempt to explain device behavior in the complete voltage range. The paper gives a justification for the need of three-dimensional simulation and addresses critical development, modeling, and simulation issues.
doi:10.1109/gaas.2002.1049066
fatcat:pihaoxwyzrdqve2g2pgv2tmkf4